Surface quantum wells in hydrogen implanted ZnO

V. Bogatu; A. Goldenblum; A. Many; Y. Goldstein

doi:10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A

Surface quantum wells in hydrogen implanted ZnO

V. Bogatu^*, A. Goldenblum, A. Many, Y. Goldstein

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.

Original language	English
Pages (from-to)	89-96
Number of pages	8
Journal	Physica Status Solidi (B): Basic Research
Volume	212
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A
State	Published - Mar 1999

Access to Document

10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A

Cite this

@article{4957a63ba7934b81990a446e9992298d,

title = "Surface quantum wells in hydrogen implanted ZnO",

abstract = "Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.",

author = "V. Bogatu and A. Goldenblum and A. Many and Y. Goldstein",

year = "1999",

month = mar,

doi = "10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A",

language = "אנגלית",

volume = "212",

pages = "89--96",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Surface quantum wells in hydrogen implanted ZnO

AU - Bogatu, V.

AU - Goldenblum, A.

AU - Many, A.

AU - Goldstein, Y.

PY - 1999/3

Y1 - 1999/3

N2 - Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.

AB - Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.

UR - https://www.scopus.com/pages/publications/0033243077

U2 - 10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A

DO - 10.1002/(SICI)1521-3951(199903)212:1<89::AID-PSSB89>3.0.CO;2-A

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0033243077

SN - 0370-1972

VL - 212

SP - 89

EP - 96

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Surface quantum wells in hydrogen implanted ZnO

Abstract

Access to Document

Other files and links

Fingerprint

Cite this