Tail states as sensitizing recombination centers for holes lifetime in a-Si:H

Y. Lubianiker*, R. Rapaport, I. Balberg, L. Fonseca, S. Z. Weisz

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We have measured the dependence of the holes mobility-lifetime product on temperature under various light intensities in intrinsic a-Si:H. We find that this product exhibits thermal quenching which is accompanied by a superlinear light intensity dependence. Numerical calculations that we have carried out show that these results can be accounted for within the framework of the conventional recombination model. However, to yield such an agreement the capture coefficients for both charge carriers at the tail states must be smaller than the corresponding coefficients for the dangling bonds. Thus the sensitizing nature of the tail states is revealed.

Original languageAmerican English
Pages (from-to)273-278
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume507
StatePublished - 1999
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: 14 Apr 199817 Apr 1998

Fingerprint

Dive into the research topics of 'Tail states as sensitizing recombination centers for holes lifetime in a-Si:H'. Together they form a unique fingerprint.

Cite this