Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

Nir Kaplan; Meir Grajower; Noa Mazurski; Joseph Shappir; Uriel Levy

doi:10.1364/CLEO_SI.2017.SM3K.7

Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

Nir Kaplan, Meir Grajower, Noa Mazurski, Joseph Shappir, Uriel Levy^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a first demonstration of plasmonic enhanced internal photoemission Schottky photodetector implemented by low temperature deposited amorphous silicon for the telecom regime. The detector show responsivity of 53μA/W.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2017
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_SI.2017.SM3K.7
State	Published - 2017
Event	CLEO: Science and Innovations, CLEO_SI 2017 - San Jose, United States Duration: 14 May 2017 → 19 May 2017

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F41-CLEO_SI 2017
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2017
Country/Territory	United States
City	San Jose
Period	14/05/17 → 19/05/17

Bibliographical note

Publisher Copyright:
© 2017 OSA.

Access to Document

10.1364/CLEO_SI.2017.SM3K.7

Cite this

Kaplan, N., Grajower, M., Mazurski, N., Shappir, J., & Levy, U. (2017). Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. In CLEO: Science and Innovations, CLEO_SI 2017 (Optics InfoBase Conference Papers; Vol. Part F41-CLEO_SI 2017). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2017.SM3K.7

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title = "Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon",

abstract = "We present a first demonstration of plasmonic enhanced internal photoemission Schottky photodetector implemented by low temperature deposited amorphous silicon for the telecom regime. The detector show responsivity of 53μA/W.",

author = "Nir Kaplan and Meir Grajower and Noa Mazurski and Joseph Shappir and Uriel Levy",

note = "Publisher Copyright: {\textcopyright} 2017 OSA.; CLEO: Science and Innovations, CLEO_SI 2017 ; Conference date: 14-05-2017 Through 19-05-2017",

year = "2017",

doi = "10.1364/CLEO_SI.2017.SM3K.7",

language = "אנגלית",

isbn = "9781943580279",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "CLEO",

}

Kaplan, N, Grajower, M, Mazurski, N, Shappir, J & Levy, U 2017, Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. in CLEO: Science and Innovations, CLEO_SI 2017. Optics InfoBase Conference Papers, vol. Part F41-CLEO_SI 2017, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2017, San Jose, United States, 14/05/17. https://doi.org/10.1364/CLEO_SI.2017.SM3K.7

Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. / Kaplan, Nir; Grajower, Meir; Mazurski, Noa et al.
CLEO: Science and Innovations, CLEO_SI 2017. Optica Publishing Group (formerly OSA), 2017. (Optics InfoBase Conference Papers; Vol. Part F41-CLEO_SI 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Levy, Uriel

PY - 2017

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Y2 - 14 May 2017 through 19 May 2017

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Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

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