Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

Nir Kaplan; Meir Grajower; Noa Mazurski; Joseph Shappir; Uriel Levy

doi:10.1364/CLEO_SI-2017-SM3K.7

Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

Nir Kaplan, Meir Grajower, Noa Mazurski, Joseph Shappir, Uriel Levy^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a first demonstration of plasmonic enhanced internal photoemission Schottky photodetector implemented by low temperature deposited amorphous silicon for the telecom regime. The detector show responsivity of .

Original language	English
Title of host publication	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_SI-2017-SM3K.7
State	Published - 25 Oct 2017
Event	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States Duration: 14 May 2017 → 19 May 2017

Publication series

Name	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Volume	2017-January

Conference

Conference	2017 Conference on Lasers and Electro-Optics, CLEO 2017
Country/Territory	United States
City	San Jose
Period	14/05/17 → 19/05/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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10.1364/CLEO_SI-2017-SM3K.7

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Kaplan, N., Grajower, M., Mazurski, N., Shappir, J., & Levy, U. (2017). Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (pp. 1-2). (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_SI-2017-SM3K.7

Kaplan, Nir ; Grajower, Meir ; Mazurski, Noa et al. / Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2 (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings).

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author = "Nir Kaplan and Meir Grajower and Noa Mazurski and Joseph Shappir and Uriel Levy",

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Kaplan, N, Grajower, M, Mazurski, N, Shappir, J & Levy, U 2017, Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. in 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2017 Conference on Lasers and Electro-Optics, CLEO 2017, San Jose, United States, 14/05/17. https://doi.org/10.1364/CLEO_SI-2017-SM3K.7

Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. / Kaplan, Nir; Grajower, Meir; Mazurski, Noa et al.
2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2 (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Kaplan N, Grajower M, Mazurski N, Shappir J, Levy U. Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2. (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings). doi: 10.1364/CLEO_SI-2017-SM3K.7

Telecom band plasmonic enhanced internal photoemission photodetector based on deposited amorphous silicon

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