Temperature dependence of non-equilibrium effects in a Fermi glass

We report on the dependence on temperature and disorder of the glassy behavior observed in thin films of In₂O_{3 - x} in the strongly localized regime. The glassy behavior is reflected as a local minimum at the cool-down gate voltage in the conductance vs. gate-voltage, G(V_g) sweeps of field-effect experiments. It is shown that these non-ergodic effects are controlled by an inverse-Arrhenius law and involves a characteristic energy which increases with disorder.