Temperature effect on photoluminescence excitation process of porous silicon

N. E. Korsunskaya; T. V. Torchinskaya; B. R. Dzhumaev; L. Yu Khomenkova; B. M. Bulakh; A. Many; Y. Goldstein; E. Savir

Temperature effect on photoluminescence excitation process of porous silicon

N. E. Korsunskaya^*, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu Khomenkova, B. M. Bulakh, A. Many, Y. Goldstein, E. Savir

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

Original language	English
Pages	511-514
Number of pages	4
State	Published - 2000
Externally published	Yes
Event	2000 International Semiconductor Conference - Sinaia, Romania Duration: 10 Oct 2000 → 14 Oct 2000

Conference

Conference	2000 International Semiconductor Conference
Country/Territory	Romania
City	Sinaia
Period	10/10/00 → 14/10/00

Cite this

@conference{1bc257edda4848839a066c7ef09387cb,

title = "Temperature effect on photoluminescence excitation process of porous silicon",

abstract = "It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.",

author = "Korsunskaya, {N. E.} and Torchinskaya, {T. V.} and Dzhumaev, {B. R.} and Khomenkova, {L. Yu} and Bulakh, {B. M.} and A. Many and Y. Goldstein and E. Savir",

year = "2000",

language = "אנגלית",

pages = "511--514",

note = "2000 International Semiconductor Conference ; Conference date: 10-10-2000 Through 14-10-2000",

}

TY - CONF

T1 - Temperature effect on photoluminescence excitation process of porous silicon

AU - Korsunskaya, N. E.

AU - Torchinskaya, T. V.

AU - Dzhumaev, B. R.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 2000

Y1 - 2000

N2 - It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

AB - It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intesity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.

UR - http://www.scopus.com/inward/record.url?scp=0034447411&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontoconference.paper???

AN - SCOPUS:0034447411

SP - 511

EP - 514

T2 - 2000 International Semiconductor Conference

Y2 - 10 October 2000 through 14 October 2000

ER -

Temperature effect on photoluminescence excitation process of porous silicon

Abstract

Conference

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