The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2/HfO2) by Thermal Decomposition of Zirconium and Hafnium β-Diketonate Complexes in the Presence and Absence of Oxygen

The preparation of thin films of zirconium oxide and hafnium oxide by decomposition of the diketonate complexes of these metals has been described in two earlier papers. The present paper deals with aspects of film growth. The rate of film growth (R) depends on the substrate temperature but as the temperature increases, powdery oxide forms rather than continuous film. R depends on the concentration of the diketonate in the gas phase only at low values of concentrations and is constant at higher concentrations. The optimal conditions for ZrO2 and HfO2 film deposition from organometallic compounds and the influence of oxygen on R are discussed.