The crystalline quality distribution in CdZnTe single crystal correlated to the interface shape during growth

M. Azoulay; S. Rotter; G. Gafni; M. Roth

doi:10.1016/0022-0248(92)90662-3

The crystalline quality distribution in CdZnTe single crystal correlated to the interface shape during growth

M. Azoulay^*, S. Rotter, G. Gafni, M. Roth

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Letter › peer-review

25 Scopus citations

Abstract

Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 10⁴ cm^-2 along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications with regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth.

Original language	English
Pages (from-to)	515-517
Number of pages	3
Journal	Journal of Crystal Growth
Volume	116
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(92)90662-3
State	Published - 1 Feb 1992

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title = "The crystalline quality distribution in CdZnTe single crystal correlated to the interface shape during growth",

abstract = "Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 104 cm-2 along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications with regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth.",

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AU - Azoulay, M.

AU - Rotter, S.

AU - Gafni, G.

AU - Roth, M.

PY - 1992/2/1

Y1 - 1992/2/1

N2 - Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 104 cm-2 along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications with regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth.

AB - Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 104 cm-2 along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications with regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth.

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The crystalline quality distribution in CdZnTe single crystal correlated to the interface shape during growth

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