The dependencies of the two carrier mobility-lifetime products on the position of the Fermi level in a-Si:H

Y. Lubianiker*, I. Balberg, S. Z. Weisz, M. Gomez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this presentation we report results obtained by the first combined application of the Metal Oxide Semiconductor and the Photocarrier Grating configurations. This combination enabled the first simultaneous study of the mobility-lifetime products of the two carriers and their light intensity exponents as a function of the position of the Fermi level, in undoped a-Si:H. We found that anticorrelations and correlations prevail between these two sets of quantities. The conclusion we derive from these behaviors is that the "defect pool" model accounts for the phototransport data much better than any other model.

Original languageEnglish
Pages (from-to)399-402
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
StatePublished - 2 Dec 1993

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