The dependencies of the two carrier mobility-lifetime products on the position of the Fermi level in a-Si:H

In this presentation we report results obtained by the first combined application of the Metal Oxide Semiconductor and the Photocarrier Grating configurations. This combination enabled the first simultaneous study of the mobility-lifetime products of the two carriers and their light intensity exponents as a function of the position of the Fermi level, in undoped a-Si:H. We found that anticorrelations and correlations prevail between these two sets of quantities. The conclusion we derive from these behaviors is that the "defect pool" model accounts for the phototransport data much better than any other model.