The effect of ground state population on the XeF laser performance

M. Rokni; J. H. Jacob; J. C. Hsia; D. W. Trainor

doi:10.1063/1.91461

The effect of ground state population on the XeF laser performance

M. Rokni^*, J. H. Jacob, J. C. Hsia, D. W. Trainor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v\=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500°K. As a result of the faster dissociation rate at 500°K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500°K.

Original language	English
Pages (from-to)	243-245
Number of pages	3
Journal	Applied Physics Letters
Volume	36
Issue number	4
DOIs	https://doi.org/10.1063/1.91461
State	Published - 1980
Externally published	Yes

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title = "The effect of ground state population on the XeF laser performance",

abstract = "In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v\=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500°K. As a result of the faster dissociation rate at 500°K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500°K.",

author = "M. Rokni and Jacob, {J. H.} and Hsia, {J. C.} and Trainor, {D. W.}",

year = "1980",

doi = "10.1063/1.91461",

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AU - Hsia, J. C.

AU - Trainor, D. W.

PY - 1980

Y1 - 1980

N2 - In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v\=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500°K. As a result of the faster dissociation rate at 500°K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500°K.

AB - In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v\=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500°K. As a result of the faster dissociation rate at 500°K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500°K.

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The effect of ground state population on the XeF laser performance

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