Abstract
Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network.
Original language | English |
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Pages (from-to) | 2803-2805 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 18 |
DOIs | |
State | Published - 1 Nov 1999 |