The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

S. Gupta*, R. S. Katiyar, G. Morell, S. Z. Weisz, I. Balberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network.

Original languageEnglish
Pages (from-to)2803-2805
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number18
DOIs
StatePublished - 1 Nov 1999

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