The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

S. Gupta; R. S. Katiyar; G. Morell; S. Z. Weisz; I. Balberg

doi:10.1063/1.125155

The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

S. Gupta^*
, R. S. Katiyar
, G. Morell
, S. Z. Weisz
, I. Balberg

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network.

Original language	English
Pages (from-to)	2803-2805
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	18
DOIs	https://doi.org/10.1063/1.125155
State	Published - 1 Nov 1999

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10.1063/1.125155

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AU - Balberg, I.

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The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

Abstract

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