TY - JOUR
T1 - The effect of light induced degradation on the sensitization phenomenon in a-Si:H
AU - Balberg, I.
AU - Dover, Y.
PY - 2006/12
Y1 - 2006/12
N2 - We report a more detailed understanding of the thermal-quenching and sensitization processes in tetrahedrally bonded amorphous semiconductors. In particular we reveal in detail the effect of light soaking, in hydrogenated amorphous silicon (a-Si:H), on the shift of the recombination transition, from the dangling bonds to the valence band-tail states as the temperature is lowered. Our experimental observations and model simulations are shown to account for various results in the literature, explaining in detail how the charge neutrality condition determines the recombination process in a-Si:H. This, in turn, demonstrates for the first time that it is possible to deduce the three valence states of the dangling bonds only on the basis of the recombination processes implied by the phototransport observations.
AB - We report a more detailed understanding of the thermal-quenching and sensitization processes in tetrahedrally bonded amorphous semiconductors. In particular we reveal in detail the effect of light soaking, in hydrogenated amorphous silicon (a-Si:H), on the shift of the recombination transition, from the dangling bonds to the valence band-tail states as the temperature is lowered. Our experimental observations and model simulations are shown to account for various results in the literature, explaining in detail how the charge neutrality condition determines the recombination process in a-Si:H. This, in turn, demonstrates for the first time that it is possible to deduce the three valence states of the dangling bonds only on the basis of the recombination processes implied by the phototransport observations.
KW - Light induced degradation
KW - Recombination
KW - Sensitization
KW - a-Si:H
UR - http://www.scopus.com/inward/record.url?scp=33845652263&partnerID=8YFLogxK
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AN - SCOPUS:33845652263
SN - 1454-4164
VL - 8
SP - 1996
EP - 2002
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
IS - 6
ER -