The effect of light soaking on the structural order in a-Si:H

S. Gupta, R. S. Katiyar, S. Z. Weisz, I. Balberg*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.

Original languageEnglish
Pages (from-to)496-500
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 A
DOIs
StatePublished - 1 May 2000
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: 23 Aug 199927 Aug 1999

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