Abstract
Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.
Original language | English |
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Pages (from-to) | 496-500 |
Number of pages | 5 |
Journal | Journal of Non-Crystalline Solids |
Volume | 266-269 A |
DOIs | |
State | Published - 1 May 2000 |
Event | 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23 Aug 1999 → 27 Aug 1999 |