The effect of light soaking on the structural order in a-Si:H

S. Gupta; R. S. Katiyar; S. Z. Weisz; I. Balberg

doi:10.1016/s0022-3093(99)00785-1

The effect of light soaking on the structural order in a-Si:H

S. Gupta, R. S. Katiyar, S. Z. Weisz, I. Balberg^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.

Original language	English
Pages (from-to)	496-500
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 A
DOIs	https://doi.org/10.1016/s0022-3093(99)00785-1
State	Published - 1 May 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23 Aug 1999 → 27 Aug 1999

Access to Document

10.1016/s0022-3093(99)00785-1

Cite this

@article{a847069eb62d47ae9ed1eefb83b1e3ad,

title = "The effect of light soaking on the structural order in a-Si:H",

abstract = "Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.",

author = "S. Gupta and Katiyar, \{R. S.\} and Weisz, \{S. Z.\} and I. Balberg",

year = "2000",

month = may,

day = "1",

doi = "10.1016/s0022-3093(99)00785-1",

language = "אנגלית",

volume = "266-269 A",

pages = "496--500",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

note = "18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - JOUR

T1 - The effect of light soaking on the structural order in a-Si:H

AU - Gupta, S.

AU - Katiyar, R. S.

AU - Weisz, S. Z.

AU - Balberg, I.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.

AB - Following conflicting reports concerning the effect of light soaking (LS) on the structure of hydrogenated amorphous silicon (a-Si:H) we have carried out a comprehensive Raman scattering study of this effect on a-Si:H films prepared by different deposition techniques. We have found that first, the LS causes a major rearrangement of atoms as suggested by recent theoretical models. Second, the short-range order decreases upon LS as we expect from the breaking of Si-Si bonds. Third and counterintuitive, the intermediate range order may increase upon LS.

UR - https://www.scopus.com/pages/publications/0001676549

U2 - 10.1016/s0022-3093(99)00785-1

DO - 10.1016/s0022-3093(99)00785-1

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0001676549

SN - 0022-3093

VL - 266-269 A

SP - 496

EP - 500

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

The effect of light soaking on the structural order in a-Si:H

Abstract

Access to Document

Other files and links

Fingerprint

Cite this