Abstract
We have studied the effect of spin-orbit scattering and of small changes in the elastic scattering-site configuration on the magnetofingerprints of mesoscopic AIGaAs/GaAs heterojunctions. The spin-orbit effect is observed through a reduction in the conductance fluctuation amplitude below 2 K, where the spin-orbit scattering dominates. The impurity configuration effect was observed by adding scatterers through photoionizing DX centers in the AIGaAs and measuring the resulting change in the magnetofingerprint. Our observations are consistent with theoretical predictions.
Original language | English |
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Pages (from-to) | 861-862 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 165-166 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |