The electrical transport and photoluminescence mechanisms in ensembles of silicon quantum dots

Isaac Balberg*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The understanding of the electrical conduction and the optical luminescence mechanisms in ensembles of Si quantum dots that are embedded in a dielectric matrix is, in spite of the wide interest in the physics of Si nanostructures in the last two decades, still at a rudimentary level. In our work we tried to evaluate these mechanisms by deriving a self consistent and comprehensive framework for the discussion of the above properties and the relation between them. This trial, to be reported here, was enabled by finding, in detail, the dependencies of the structural, the transport, the optical and the charge storage properties, on the density of the Si quantum dots, and interpreting these dependencies in terms of quantum confinement, Coulomb blockade and percolation cluster statistics.

Original languageEnglish
Title of host publicationAdvanced Materials and Nanotechnology - Proceedings of the International Conference (AMN-4)
Pages5-8
Number of pages4
DOIs
StatePublished - 2009
Event4th International Conference on Advanced Materials and Nanotechnology, AMN-4 - Dunedin, New Zealand
Duration: 8 Feb 200912 Feb 2009

Publication series

NameAIP Conference Proceedings
Volume1151
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference4th International Conference on Advanced Materials and Nanotechnology, AMN-4
Country/TerritoryNew Zealand
CityDunedin
Period8/02/0912/02/09

Keywords

  • Coulomb blockade
  • Hopping
  • Nanocrystallites
  • Percolation
  • Quantum confinement
  • Quantum dots

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