The electronic band structure of V3Ga and V3Si

I. B. Goldberg; M. Weger

doi:10.1088/0022-3719/4/10/002

The electronic band structure of V₃Ga and V₃Si

I. B. Goldberg^*, M. Weger

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The electronic band structure of V₃Ga and V₃Si is approximated in the tight binding method, allowing for interchain coupling. The effective integrals are also determined from Mattheiss' APW calculation. Special attention is paid to the density of states curve which is found to possess sharp peaks in the vicinity of the Fermi energy, as was suggested by Clogston and Jaccarino.

Original language	English
Article number	002
Pages (from-to)	L188-L191
Journal	Journal of Physics C: Solid State Physics
Volume	4
Issue number	10
DOIs	https://doi.org/10.1088/0022-3719/4/10/002
State	Published - 1971

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title = "The electronic band structure of V3Ga and V3Si",

abstract = "The electronic band structure of V3Ga and V3Si is approximated in the tight binding method, allowing for interchain coupling. The effective integrals are also determined from Mattheiss' APW calculation. Special attention is paid to the density of states curve which is found to possess sharp peaks in the vicinity of the Fermi energy, as was suggested by Clogston and Jaccarino.",

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AB - The electronic band structure of V3Ga and V3Si is approximated in the tight binding method, allowing for interchain coupling. The effective integrals are also determined from Mattheiss' APW calculation. Special attention is paid to the density of states curve which is found to possess sharp peaks in the vicinity of the Fermi energy, as was suggested by Clogston and Jaccarino.

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The electronic band structure of V₃Ga and V₃Si

Abstract

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