The light intensity exponent of the minority carrier lifetime and the mobility gap states in a-Si:H

I. Balberg*, Y. Lubianiker, L. Fonseca, S. Z. Weisz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We recently gave physical arguments that the recombination in a single type of dangling bond centers will yield a zero value for the light intensity exponent of the minority carriers, λ. We then concluded that the observed λ ≠ 0 value in a-Si:H indicates the presence of other states in its mobility gap. In this paper, we substantiate those arguments by an analytic proof, by computer simulations and by considering our recent experimental findings on the temperature dependence of λ. In particular, we show that in an n-type photoconductor the dangling bond acts as a single acceptor-like recombination center.

Original languageEnglish
Pages (from-to)206-210
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 1
DOIs
StatePublished - May 1998

Keywords

  • Light intensity exponent
  • Minority carriers
  • Mobility gap

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