TY - JOUR
T1 - The light intensity exponent of the minority carrier lifetime and the mobility gap states in a-Si:H
AU - Balberg, I.
AU - Lubianiker, Y.
AU - Fonseca, L.
AU - Weisz, S. Z.
PY - 1998/5
Y1 - 1998/5
N2 - We recently gave physical arguments that the recombination in a single type of dangling bond centers will yield a zero value for the light intensity exponent of the minority carriers, λ. We then concluded that the observed λ ≠ 0 value in a-Si:H indicates the presence of other states in its mobility gap. In this paper, we substantiate those arguments by an analytic proof, by computer simulations and by considering our recent experimental findings on the temperature dependence of λ. In particular, we show that in an n-type photoconductor the dangling bond acts as a single acceptor-like recombination center.
AB - We recently gave physical arguments that the recombination in a single type of dangling bond centers will yield a zero value for the light intensity exponent of the minority carriers, λ. We then concluded that the observed λ ≠ 0 value in a-Si:H indicates the presence of other states in its mobility gap. In this paper, we substantiate those arguments by an analytic proof, by computer simulations and by considering our recent experimental findings on the temperature dependence of λ. In particular, we show that in an n-type photoconductor the dangling bond acts as a single acceptor-like recombination center.
KW - Light intensity exponent
KW - Minority carriers
KW - Mobility gap
UR - http://www.scopus.com/inward/record.url?scp=0032068961&partnerID=8YFLogxK
U2 - 10.1016/S0022-3093(98)00049-0
DO - 10.1016/S0022-3093(98)00049-0
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AN - SCOPUS:0032068961
SN - 0022-3093
VL - 227-230
SP - 206
EP - 210
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -