The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

I. V. Antonova; M. B. Gulyaev; A. G. Cherkov; V. A. Volodin; D. V. Marin; V. A. Skuratov; J. Jedrzejewski; I. Balberg

doi:10.1088/0957-4484/20/9/095205

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

I. V. Antonova, M. B. Gulyaev, A. G. Cherkov, V. A. Volodin, D. V. Marin, V. A. Skuratov, J. Jedrzejewski, I. Balberg

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO₂) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.

Original language	English
Article number	095205
Journal	Nanotechnology
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/0957-4484/20/9/095205
State	Published - 2009

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abstract = "We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO2) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.",

author = "Antonova, {I. V.} and Gulyaev, {M. B.} and Cherkov, {A. G.} and Volodin, {V. A.} and Marin, {D. V.} and Skuratov, {V. A.} and J. Jedrzejewski and I. Balberg",

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AU - Antonova, I. V.

AU - Gulyaev, M. B.

AU - Cherkov, A. G.

AU - Volodin, V. A.

AU - Marin, D. V.

AU - Skuratov, V. A.

AU - Jedrzejewski, J.

AU - Balberg, I.

PY - 2009

Y1 - 2009

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AB - We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO2) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.

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The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

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