The study of GaAs reactive ion etching in Cl2/Ar

AE Dulkin*, VZ Pyataev, NO Sokolova, SA Moshkalyov, AS Smirnov, KS Frolov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Reactive ion etching (RIE) of GaAs in Cl2/Ar has been investigated for various rf discharge parameters. We have demonstrated the significant difference in etching for high and low chlorine contents. A decrease in chlorine content which can be obtained by certain techniques allows a substantial reduction in impurity flux to the plasma, the production of good surface morphology and anisotropy of stripes with a rather high etch rate (∼0.1 μm min-1) and an essential decrease of rf power and self-bias. The results of the work also show an important role of the plasma-electrode interaction in chlorine-containing mixtures.

Original languageAmerican English
Pages (from-to)913-917
Number of pages5
JournalVacuum
Volume44
Issue number9
DOIs
StatePublished - Sep 1993
Externally publishedYes

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