Abstract
The temperature dependence of polycrystalline Si conductivity is studied. The conductivity is analyzed in terms of activation energy Ea and a prefactor σ0. The correlation between Ea and σ0 is shown to be consistent with the assumption of a linear relation between the grain boundary potential barrier height and the temperature. Field effect is used to measure surface conductivity, which is shown to have similar properties.
Original language | English |
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Pages (from-to) | 4987-4992 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 64 |
Issue number | 10 |
DOIs | |
State | Published - 1988 |