The temperature dependence of polycrystalline Si bulk and surface conductivity

Y. Alpern*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The temperature dependence of polycrystalline Si conductivity is studied. The conductivity is analyzed in terms of activation energy Ea and a prefactor σ0. The correlation between Ea and σ0 is shown to be consistent with the assumption of a linear relation between the grain boundary potential barrier height and the temperature. Field effect is used to measure surface conductivity, which is shown to have similar properties.

Original languageEnglish
Pages (from-to)4987-4992
Number of pages6
JournalJournal of Applied Physics
Volume64
Issue number10
DOIs
StatePublished - 1988

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