Thermal doping by vacancy formation in copper sulfide nanocrystal arrays

Y. Bekenstein, K. Vinokurov, S. Keren-Zur, I. Hadar, Y. Schilt, U. Raviv, O. Millo*, U. Banin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

A new approach for doping of Cu2S nanocrystal arrays using thermal treatment at moderate temperatures (T < 400 K) is presented. This thermal doping process yields conductance enhancement by 6 orders of magnitude. Local probe measurements prove this doping is an intraparticle effect and, moreover, tunneling spectroscopy data signify p-type doping. The doping mechanism is attributed to Cu vacancy formation, resulting in free holes. Thermal-doping temperature dependence exhibits an Arrhenius-like behavior, providing the vacancy formation energy of 1.6 eV. The moderate temperature conditions for thermal doping unique to these nanocrystals allow patterned doping of nanocrystal films through local heating by a focused laser beam, toward fabrication of nanocrystal-based electronic devices.

Original languageAmerican English
Pages (from-to)1349-1353
Number of pages5
JournalNano Letters
Volume14
Issue number3
DOIs
StatePublished - 12 Mar 2014

Keywords

  • Doping semiconducting nanocrystals
  • copper sulfide nanocrystals
  • nanocrystal arrays
  • patterned doping
  • scanning tunneling spectroscopy
  • vacancy formation

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