TY - JOUR
T1 - Thermal quenching of the minority-carrier lifetime in a-Si:H
AU - Lubianiker, Y.
AU - Balberg, I.
AU - Fonseca, L.
PY - 1997
Y1 - 1997
N2 - While the phenomenon of thermal quenching of the photoconductivity (i.e., the decrease of the majority-carrier mobility-lifetime product with increasing temperature) is well known, the thermal quenching of the minority-carrier mobility-lifetime product has not been reported thus far for any photoconductor. In this paper, we report such an effect in "device-quality" hydrogenated amorphous silicon, a-Si:H. It is shown that this unusual phenomenon can be accommodated within the framework of available models suggested for intrinsic a-Si:H.
AB - While the phenomenon of thermal quenching of the photoconductivity (i.e., the decrease of the majority-carrier mobility-lifetime product with increasing temperature) is well known, the thermal quenching of the minority-carrier mobility-lifetime product has not been reported thus far for any photoconductor. In this paper, we report such an effect in "device-quality" hydrogenated amorphous silicon, a-Si:H. It is shown that this unusual phenomenon can be accommodated within the framework of available models suggested for intrinsic a-Si:H.
UR - http://www.scopus.com/inward/record.url?scp=0000300868&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.55.R15997
DO - 10.1103/PhysRevB.55.R15997
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AN - SCOPUS:0000300868
SN - 1098-0121
VL - 55
SP - R15997-R16000
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
ER -