In this paper we present a systematic experimental investigation of the optical properties associated with inter-subband and inter-valence band transitions in p-type pseudomorphic Si1-xGex/Si multiple quantum-wells structure under high-temperature thermal treatments. The structure exhibits two types of optical absorption lines: the first obeys the inter-subband selection rules and is assigned to heavy-hole transitions while the second obeys the inter-valence band selection rules and is assigned to transitions between a heavy hole and a mixed spin split off and light-hole state. Annealing treatments reveal two kinds of thermally activated processes. The first process is assigned to strain relaxation while the second is assigned to Si and Ge inter-diffusion. Raman spectroscopy provides additional support to our interpretation of the activation processes. We propose a quantitative model, based on the Bir-Pikus deformation potential to explain the experimental results.
|Original language||American English|
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|State||Published - Apr 2000|
|Event||The 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99) - Bad Ischl, Austria|
Duration: 7 Sep 1999 → 11 Sep 1999
Bibliographical noteFunding Information:
This work was partially supported by grant #5877 of the Israeli Ministry of Science.