TY - JOUR
T1 - Thermal relaxation processes in Si1-xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy
AU - Adoram, B.
AU - Krapf, D.
AU - Levy, M.
AU - Beserman, R.
AU - Thomas, S.
AU - Wang, K. L.
AU - Shappir, J.
AU - Sa'ar, A.
N1 - Funding Information:
This work was partially supported by grant #5877 of the Israeli Ministry of Science.
PY - 2000/4
Y1 - 2000/4
N2 - In this paper we present a systematic experimental investigation of the optical properties associated with inter-subband and inter-valence band transitions in p-type pseudomorphic Si1-xGex/Si multiple quantum-wells structure under high-temperature thermal treatments. The structure exhibits two types of optical absorption lines: the first obeys the inter-subband selection rules and is assigned to heavy-hole transitions while the second obeys the inter-valence band selection rules and is assigned to transitions between a heavy hole and a mixed spin split off and light-hole state. Annealing treatments reveal two kinds of thermally activated processes. The first process is assigned to strain relaxation while the second is assigned to Si and Ge inter-diffusion. Raman spectroscopy provides additional support to our interpretation of the activation processes. We propose a quantitative model, based on the Bir-Pikus deformation potential to explain the experimental results.
AB - In this paper we present a systematic experimental investigation of the optical properties associated with inter-subband and inter-valence band transitions in p-type pseudomorphic Si1-xGex/Si multiple quantum-wells structure under high-temperature thermal treatments. The structure exhibits two types of optical absorption lines: the first obeys the inter-subband selection rules and is assigned to heavy-hole transitions while the second obeys the inter-valence band selection rules and is assigned to transitions between a heavy hole and a mixed spin split off and light-hole state. Annealing treatments reveal two kinds of thermally activated processes. The first process is assigned to strain relaxation while the second is assigned to Si and Ge inter-diffusion. Raman spectroscopy provides additional support to our interpretation of the activation processes. We propose a quantitative model, based on the Bir-Pikus deformation potential to explain the experimental results.
UR - http://www.scopus.com/inward/record.url?scp=0033893072&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(99)00317-3
DO - 10.1016/S1386-9477(99)00317-3
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AN - SCOPUS:0033893072
SN - 1386-9477
VL - 7
SP - 255
EP - 258
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1
T2 - The 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99)
Y2 - 7 September 1999 through 11 September 1999
ER -