Thermoelectric properties of nanostructured material based on Si and GaSb

Dmitrii L. Goroshko*, Evgeniy Y. Subbotin, Evgeniy A. Chusovitin, Semeyon A. Balagan, Konstantin N. Galkin, Sergey A. Dotsenko, Anton K. Gutakovskii, Vladimir V. Khovaylo, Andrey A. Usenko, Vladimir U. Nazarov, Nikolay G. Galkin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m-1·K-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

Original languageAmerican English
Title of host publicationPhysics and Technology of Nanostructured Materials
EditorsNikolay G. Galkin
PublisherTrans Tech Publications Ltd
Pages102-109
Number of pages8
Volume386 DDF
ISBN (Print)9783035714777
DOIs
StatePublished - 2018
Externally publishedYes
Event4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018 - Vladivostok, Russian Federation
Duration: 23 Sep 201828 Sep 2018

Conference

Conference4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018
Country/TerritoryRussian Federation
CityVladivostok
Period23/09/1828/09/18

Bibliographical note

Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland

Keywords

  • AFM
  • GaSb
  • Islands
  • Nanocrystals
  • Seebeck coefficient
  • Silicon
  • TEM
  • ZT

Fingerprint

Dive into the research topics of 'Thermoelectric properties of nanostructured material based on Si and GaSb'. Together they form a unique fingerprint.

Cite this