Thermoelectric properties of nanostructured material based on Si and GaSb

Dmitrii L. Goroshko; Evgeniy Y. Subbotin; Evgeniy A. Chusovitin; Semeyon A. Balagan; Konstantin N. Galkin; Sergey A. Dotsenko; Anton K. Gutakovskii; Vladimir V. Khovaylo; Andrey A. Usenko; Vladimir U. Nazarov; Nikolay G. Galkin

doi:10.4028/www.scientific.net/DDF.386.102

Thermoelectric properties of nanostructured material based on Si and GaSb

Dmitrii L. Goroshko^*, Evgeniy Y. Subbotin, Evgeniy A. Chusovitin, Semeyon A. Balagan, Konstantin N. Galkin, Sergey A. Dotsenko, Anton K. Gutakovskii, Vladimir V. Khovaylo, Andrey A. Usenko, Vladimir U. Nazarov, Nikolay G. Galkin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω^-1·cm^-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m^-1·K^-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

Original language	English
Title of host publication	Physics and Technology of Nanostructured Materials
Editors	Nikolay G. Galkin
Publisher	Trans Tech Publications Ltd
Pages	102-109
Number of pages	8
Volume	386 DDF
ISBN (Print)	9783035714777
DOIs	https://doi.org/10.4028/www.scientific.net/DDF.386.102
State	Published - 2018
Externally published	Yes
Event	4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018 - Vladivostok, Russian Federation Duration: 23 Sep 2018 → 28 Sep 2018

Conference

Conference	4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018
Country/Territory	Russian Federation
City	Vladivostok
Period	23/09/18 → 28/09/18

Bibliographical note

Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland

Keywords

AFM
GaSb
Islands
Nanocrystals
Seebeck coefficient
Silicon
TEM
ZT

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10.4028/www.scientific.net/DDF.386.102

Cite this

Goroshko, D. L., Subbotin, E. Y., Chusovitin, E. A., Balagan, S. A., Galkin, K. N., Dotsenko, S. A., Gutakovskii, A. K., Khovaylo, V. V., Usenko, A. A., Nazarov, V. U., & Galkin, N. G. (2018). Thermoelectric properties of nanostructured material based on Si and GaSb. In N. G. Galkin (Ed.), Physics and Technology of Nanostructured Materials (Vol. 386 DDF, pp. 102-109). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/DDF.386.102

@inproceedings{5a996581a3674ec1bd26edf0a7d9a8d8,

title = "Thermoelectric properties of nanostructured material based on Si and GaSb",

abstract = "Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m-1·K-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.",

keywords = "AFM, GaSb, Islands, Nanocrystals, Seebeck coefficient, Silicon, TEM, ZT",

author = "Goroshko, {Dmitrii L.} and Subbotin, {Evgeniy Y.} and Chusovitin, {Evgeniy A.} and Balagan, {Semeyon A.} and Galkin, {Konstantin N.} and Dotsenko, {Sergey A.} and Gutakovskii, {Anton K.} and Khovaylo, {Vladimir V.} and Usenko, {Andrey A.} and Nazarov, {Vladimir U.} and Galkin, {Nikolay G.}",

note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland; 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018 ; Conference date: 23-09-2018 Through 28-09-2018",

year = "2018",

doi = "10.4028/www.scientific.net/DDF.386.102",

language = "אנגלית",

isbn = "9783035714777",

volume = "386 DDF",

pages = "102--109",

editor = "Galkin, {Nikolay G.}",

booktitle = "Physics and Technology of Nanostructured Materials",

publisher = "Trans Tech Publications Ltd",

}

Goroshko, DL, Subbotin, EY, Chusovitin, EA, Balagan, SA, Galkin, KN, Dotsenko, SA, Gutakovskii, AK, Khovaylo, VV, Usenko, AA, Nazarov, VU & Galkin, NG 2018, Thermoelectric properties of nanostructured material based on Si and GaSb. in NG Galkin (ed.), Physics and Technology of Nanostructured Materials. vol. 386 DDF, Trans Tech Publications Ltd, pp. 102-109, 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018, Vladivostok, Russian Federation, 23/09/18. https://doi.org/10.4028/www.scientific.net/DDF.386.102

Thermoelectric properties of nanostructured material based on Si and GaSb. / Goroshko, Dmitrii L.; Subbotin, Evgeniy Y.; Chusovitin, Evgeniy A. et al.
Physics and Technology of Nanostructured Materials. ed. / Nikolay G. Galkin. Vol. 386 DDF Trans Tech Publications Ltd, 2018. p. 102-109.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermoelectric properties of nanostructured material based on Si and GaSb

AU - Goroshko, Dmitrii L.

AU - Subbotin, Evgeniy Y.

AU - Chusovitin, Evgeniy A.

AU - Balagan, Semeyon A.

AU - Galkin, Konstantin N.

AU - Dotsenko, Sergey A.

AU - Gutakovskii, Anton K.

AU - Khovaylo, Vladimir V.

AU - Usenko, Andrey A.

AU - Nazarov, Vladimir U.

AU - Galkin, Nikolay G.

PY - 2018

Y1 - 2018

N2 - Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m-1·K-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

AB - Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m-1·K-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

KW - AFM

KW - GaSb

KW - Islands

KW - Nanocrystals

KW - Seebeck coefficient

KW - Silicon

KW - TEM

KW - ZT

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DO - 10.4028/www.scientific.net/DDF.386.102

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AN - SCOPUS:85054856946

SN - 9783035714777

VL - 386 DDF

SP - 102

EP - 109

BT - Physics and Technology of Nanostructured Materials

A2 - Galkin, Nikolay G.

PB - Trans Tech Publications Ltd

T2 - 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018

Y2 - 23 September 2018 through 28 September 2018

ER -

Thermoelectric properties of nanostructured material based on Si and GaSb

Abstract

Conference

Bibliographical note

Keywords

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