TY - JOUR
T1 - Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I
AU - Balog, M.
AU - Schieber, M.
AU - Patai, S.
AU - Michman, M.
PY - 1972/12
Y1 - 1972/12
N2 - Thin films of TiO2, ZrO2 and HfO2 have been deposited on single crystals of (111) silicon, by chemical vapor deposition (CVD) of the respective organometallic compounds. The thin films of TiO2 have the anatase structure while ZrO2 and HfO2 are monoclinic. All films are easily etched by 5% HF solution, while films of TiO2 are also etched by 70% H2SO4. The indices of refraction of the thin films are 2.05-2.26 for TiO2, 1.94 for ZrO2 and 2.02 for HfO2. All the oxide films show good MOS C-V characteristics, the flatband voltages having values near zero. The bias-temperature (B-T) tests on C-V curves in the case of HfO2 show high stability.
AB - Thin films of TiO2, ZrO2 and HfO2 have been deposited on single crystals of (111) silicon, by chemical vapor deposition (CVD) of the respective organometallic compounds. The thin films of TiO2 have the anatase structure while ZrO2 and HfO2 are monoclinic. All films are easily etched by 5% HF solution, while films of TiO2 are also etched by 70% H2SO4. The indices of refraction of the thin films are 2.05-2.26 for TiO2, 1.94 for ZrO2 and 2.02 for HfO2. All the oxide films show good MOS C-V characteristics, the flatband voltages having values near zero. The bias-temperature (B-T) tests on C-V curves in the case of HfO2 show high stability.
UR - http://www.scopus.com/inward/record.url?scp=0000539086&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(72)90260-6
DO - 10.1016/0022-0248(72)90260-6
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AN - SCOPUS:0000539086
SN - 0022-0248
VL - 17
SP - 298
EP - 301
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - C
ER -