Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I

M. Balog*, M. Schieber, S. Patai, M. Michman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

137 Scopus citations

Abstract

Thin films of TiO2, ZrO2 and HfO2 have been deposited on single crystals of (111) silicon, by chemical vapor deposition (CVD) of the respective organometallic compounds. The thin films of TiO2 have the anatase structure while ZrO2 and HfO2 are monoclinic. All films are easily etched by 5% HF solution, while films of TiO2 are also etched by 70% H2SO4. The indices of refraction of the thin films are 2.05-2.26 for TiO2, 1.94 for ZrO2 and 2.02 for HfO2. All the oxide films show good MOS C-V characteristics, the flatband voltages having values near zero. The bias-temperature (B-T) tests on C-V curves in the case of HfO2 show high stability.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalJournal of Crystal Growth
Volume17
Issue numberC
DOIs
StatePublished - Dec 1972

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