Abstract
ZrO2 layers were deposited for the purpose of obtaining high dielectric constant insulating layers for capacitance applications. Trifluoroacety lacetonate of zirconium was used as the source material in our open MOCVD system. Layer thickness was in the range 300-1500 Å, the substrate being degenerate n-type silicon wafers. Under optimum conditions layers with good adhesion and uniformity were obtained. The layers were polycrystalline with characteristic linear dimensions of 400 Å. Electrical measurements were used for characterization and the relative dielectric constants obtained were 30 ± 1.
Original language | English |
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Pages (from-to) | 263-272 |
Number of pages | 10 |
Journal | Journal of Electronic Materials |
Volume | 13 |
Issue number | 2 |
DOIs | |
State | Published - Mar 1984 |
Keywords
- high dielectric constant materials
- MOCVD
- ZrO