Thin films of ZrO2 metal organic chemical vapor deposition

L. Ben-Dor*, A. Elshtein, S. Halabi, I. Pinsky, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

ZrO2 layers were deposited for the purpose of obtaining high dielectric constant insulating layers for capacitance applications. Trifluoroacety lacetonate of zirconium was used as the source material in our open MOCVD system. Layer thickness was in the range 300-1500 Å, the substrate being degenerate n-type silicon wafers. Under optimum conditions layers with good adhesion and uniformity were obtained. The layers were polycrystalline with characteristic linear dimensions of 400 Å. Electrical measurements were used for characterization and the relative dielectric constants obtained were 30 ± 1.

Original languageEnglish
Pages (from-to)263-272
Number of pages10
JournalJournal of Electronic Materials
Volume13
Issue number2
DOIs
StatePublished - Mar 1984

Keywords

  • high dielectric constant materials
  • MOCVD
  • ZrO

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