TY - JOUR
T1 - Tilted Magnetic Anisotropy with In-Plane Broken Symmetry in Ru-Substituted Manganite Films
AU - Das, Brajagopal
AU - Wysocki, Lena
AU - Schöpf, Jörg
AU - Yang, Lin
AU - Capua, Amir
AU - van Loosdrecht, Paul H.M.
AU - Kornblum, Lior
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2023/10
Y1 - 2023/10
N2 - Controlling the magnetic anisotropy of materials is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion-based devices. Ru-substituted La0.7Sr0.3MnO3 (Ru-LSMO) is an emerging material, showing tilted magnetic anisotropy (TMA) and possible nontrivial magnetic topologies. Here anisotropic in-plane magnetization is reported in moderately compressed Ru-LSMO films, coexisting with TMA. This combination is attractive for technological applications, such as spin-orbit torque (SOT) based devices and other spintronic applications. A microstructural analysis of films of this material is presented, and Ru single ion anisotropy and strain-induced structural mechanisms are found to be responsible for both the in-plane anisotropy and the TMA. The manifestation of these properties in a correlated oxide with Curie temperature near room temperature highlights an attractive platform for technological realization of SOT and other spintronic devices. Illustrating the mechanisms behind these properties provides the necessary engineering space for harnessing these phenomena for practical devices.
AB - Controlling the magnetic anisotropy of materials is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion-based devices. Ru-substituted La0.7Sr0.3MnO3 (Ru-LSMO) is an emerging material, showing tilted magnetic anisotropy (TMA) and possible nontrivial magnetic topologies. Here anisotropic in-plane magnetization is reported in moderately compressed Ru-LSMO films, coexisting with TMA. This combination is attractive for technological applications, such as spin-orbit torque (SOT) based devices and other spintronic applications. A microstructural analysis of films of this material is presented, and Ru single ion anisotropy and strain-induced structural mechanisms are found to be responsible for both the in-plane anisotropy and the TMA. The manifestation of these properties in a correlated oxide with Curie temperature near room temperature highlights an attractive platform for technological realization of SOT and other spintronic devices. Illustrating the mechanisms behind these properties provides the necessary engineering space for harnessing these phenomena for practical devices.
KW - correlated oxides
KW - magnetic anisotropy
KW - magnetic oxides
KW - manganite films
KW - oxides microstructure
UR - http://www.scopus.com/inward/record.url?scp=85169546296&partnerID=8YFLogxK
U2 - 10.1002/aelm.202300253
DO - 10.1002/aelm.202300253
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AN - SCOPUS:85169546296
SN - 2199-160X
VL - 9
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 10
M1 - 2300253
ER -