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Total dielectronic recombination rate coefficient for Ar-like tungsten

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35 Scopus citations

Abstract

Ab initio calculations of the total dielectronic recombination (DR) rate coefficient for Ar-like tungsten [Formula Presented] are performed using the relativistic HULLAC code package based on the parametric potential method. The high efficiency of HULLAC compared to other codes enables us to perform extensive DR calculations for highly complex atomic systems such as Ar-like tungsten. The present work provides a general procedure for computing the DR rate coefficients for multielectron high-[Formula Presented] ions. This procedure is applicable to DR computations for other Ar-like ions, as well as for ions in neighboring isoelectronic sequences. In the present work level-by-level calculations are performed for evaluating the contributions to DR through all the relevant K-like autoionizing inner-shell excited configuration complexes: [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] [Formula Presented] and [Formula Presented] In addition, extrapolation methods are developed to calculate the contributions of even higher [Formula Presented] complexes along each complex series. In the case of [Formula Presented] the usual complex-by-complex extrapolation method based on the [Formula Presented] scaling law is found to be inaccurate; thus, a more detailed level-by-level procedure is discussed. All calculations are carried out assuming no electron collisions occur after the initial electron capture. Although the dominant DR contributions come from [Formula Presented] and [Formula Presented] the contributions of the other complex series cannot be neglected. A comparison between the present results and the Burgess-Merts (BM) approximation shows that at low electron temperatures the BM approximation greatly underestimates the DR rate coefficients, whereas at high electron temperatures this approximation is fairly good.

Original languageEnglish
Pages (from-to)3493-3503
Number of pages11
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume57
Issue number5
DOIs
StatePublished - 1998

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