Trapped-Ion Quantum Logic with Global Radiation Fields

S. Weidt, J. Randall, S. C. Webster, K. Lake, A. E. Webb, I. Cohen, T. Navickas, B. Lekitsch, A. Retzker, W. K. Hensinger

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

Original languageAmerican English
Article number220501
JournalPhysical Review Letters
Volume117
Issue number22
DOIs
StatePublished - 23 Nov 2016

Bibliographical note

Funding Information:
This work is supported by the U.K. Engineering and Physical Sciences Research Council [EP/G007276/1, the UK Quantum Technology hub for Networked Quantum Information Technologies (EP/M013243/1), the UK Quantum Technology hub for Sensors and Metrology (EP/M013294/1)], the European Commissions Seventh Framework Programme (FP7/2007-2013) under Grant Agreement No.270843 (iQIT), the Army Research Laboratory under Cooperative Agreement No.W911NF-12-2-0072, U.S. Army Research Office Contract No.W911NF-14-2-0106, and the University of Sussex. A.R. acknowledges the support of the Israel Science Foundation (Grant No.039-8823), the support of the European commission (STReP EQUAM Grant Agreement No.323714), the Niedersachsen-Israeli Research Cooperation Program and DIP program (FO 703/2-1) and the support of the US Army Research Office under Contract No.W911NF-15-1-0250.

Publisher Copyright:
© 2016 American Physical Society.

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