Trapping effects in thin oxynitride layers in metal-insulator-semiconductor devices

A. Faigon; J. Shappir

doi:10.1063/1.336233

Trapping effects in thin oxynitride layers in metal-insulator-semiconductor devices

A. Faigon^*, J. Shappir

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×10¹⁷ cm^-3 with a capture cross section of ∼10^-17 cm ².

Original language	English
Pages (from-to)	4633-4637
Number of pages	5
Journal	Journal of Applied Physics
Volume	58
Issue number	12
DOIs	https://doi.org/10.1063/1.336233
State	Published - 1985

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title = "Trapping effects in thin oxynitride layers in metal-insulator-semiconductor devices",

abstract = "The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×1017 cm-3 with a capture cross section of ∼10-17 cm 2.",

author = "A. Faigon and J. Shappir",

year = "1985",

doi = "10.1063/1.336233",

language = "אנגלית",

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journal = "Journal of Applied Physics",

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AU - Shappir, J.

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N2 - The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×1017 cm-3 with a capture cross section of ∼10-17 cm 2.

AB - The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×1017 cm-3 with a capture cross section of ∼10-17 cm 2.

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Trapping effects in thin oxynitride layers in metal-insulator-semiconductor devices

Abstract

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