TY - JOUR
T1 - Tuning the ground state symmetry of acetylenyl radicals
AU - Zeng, Tao
AU - Danovich, David
AU - Shaik, Sason
AU - Ananth, Nandini
AU - Hoffmann, Roald
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/8/26
Y1 - 2015/8/26
N2 - The lowest excited state of the acetylenyl radical, HCC, is a 2Π state, only 0.46 eV above the ground state, 2Σ+. The promotion of an electron from a π bond pair to a singly occupied σ hybrid orbital is all that is involved, and so we set out to tune those orbital energies, and with them the relative energetics of 2Π and 2Σ+ states. A strategy of varying ligand electronegativity, employed in a previous study on substituted carbynes, RC, was useful, but proved more difficult to apply for substituted acetylenyl radicals, RCC. However, π-donor/acceptor substitution is effective in modifying the state energies. We are able to design molecules with 2Π ground states (NaOCC, H2NCC (2A″), HCSi, FCSi, etc.) and vary the 2Σ+-2Π energy gap over a 4 eV range. We find an inconsistency between bond order and bond dissociation energy measures of the bond strength in the Si-containing molecules; we provide an explanation through an analysis of the relevant potential energy curves.
AB - The lowest excited state of the acetylenyl radical, HCC, is a 2Π state, only 0.46 eV above the ground state, 2Σ+. The promotion of an electron from a π bond pair to a singly occupied σ hybrid orbital is all that is involved, and so we set out to tune those orbital energies, and with them the relative energetics of 2Π and 2Σ+ states. A strategy of varying ligand electronegativity, employed in a previous study on substituted carbynes, RC, was useful, but proved more difficult to apply for substituted acetylenyl radicals, RCC. However, π-donor/acceptor substitution is effective in modifying the state energies. We are able to design molecules with 2Π ground states (NaOCC, H2NCC (2A″), HCSi, FCSi, etc.) and vary the 2Σ+-2Π energy gap over a 4 eV range. We find an inconsistency between bond order and bond dissociation energy measures of the bond strength in the Si-containing molecules; we provide an explanation through an analysis of the relevant potential energy curves.
UR - http://www.scopus.com/inward/record.url?scp=84992008582&partnerID=8YFLogxK
U2 - 10.1021/acscentsci.5b00187
DO - 10.1021/acscentsci.5b00187
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AN - SCOPUS:84992008582
SN - 2374-7943
VL - 1
SP - 270
EP - 278
JO - ACS Central Science
JF - ACS Central Science
IS - 5
ER -