Tunneling in field induced diode in indium antimonide

S. Margalit*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Tunneling in the forward bias polarity of a field induced diode in indium antimonide is treated theoretically and experimentally. The theory leads to tunneling current-voltage characteristics with a region of negative resistance which are dependent upon the various parameters of the device, such as the gate voltage, substrate acceptor concentration and oxide thickness. A three-terminal device in which the gate voltage controls the tunneling I-V characteristics can thus be realized. Measurements were performed on an experimental device obtained by diffusion of cadmium into N-type InSb semiconductor. A chemically deposited SiO2 layer was used to isolate the evaporated CrAu gate electrode from the substrate. Deviations from theory are shown to result from the two-dimensional character of the device.

Original languageEnglish
Pages (from-to)789-794
Number of pages6
JournalSolid-State Electronics
Volume19
Issue number9
DOIs
StatePublished - Sep 1976
Externally publishedYes

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