Abstract
Tunneling in the forward bias polarity of a field induced diode in indium antimonide is treated theoretically and experimentally. The theory leads to tunneling current-voltage characteristics with a region of negative resistance which are dependent upon the various parameters of the device, such as the gate voltage, substrate acceptor concentration and oxide thickness. A three-terminal device in which the gate voltage controls the tunneling I-V characteristics can thus be realized. Measurements were performed on an experimental device obtained by diffusion of cadmium into N-type InSb semiconductor. A chemically deposited SiO2 layer was used to isolate the evaporated CrAu gate electrode from the substrate. Deviations from theory are shown to result from the two-dimensional character of the device.
Original language | English |
---|---|
Pages (from-to) | 789-794 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 19 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1976 |
Externally published | Yes |