Tunneling in field induced diode in indium antimonide

Tunneling in the forward bias polarity of a field induced diode in indium antimonide is treated theoretically and experimentally. The theory leads to tunneling current-voltage characteristics with a region of negative resistance which are dependent upon the various parameters of the device, such as the gate voltage, substrate acceptor concentration and oxide thickness. A three-terminal device in which the gate voltage controls the tunneling I-V characteristics can thus be realized. Measurements were performed on an experimental device obtained by diffusion of cadmium into N-type InSb semiconductor. A chemically deposited SiO₂ layer was used to isolate the evaporated CrAu gate electrode from the substrate. Deviations from theory are shown to result from the two-dimensional character of the device.