Tunneling in hydrogenated amorphous silicon

I. Balberg*, D. E. Carlson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

For the first time, structure has been found in the electron tunneling characteristics of a metal-oxide-semiconductor tunnel junction of an amorphous semiconductor. In the present study the amorphous semiconductor is phosphorus-doped hydrogenated amorphous silicon. The results have been analyzed to determine the surface density of states over part of the forbidden gap. The basic features of the density-of-states distribution are in agreement with the results of field-effect measurements reported for this material.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalPhysical Review Letters
Volume43
Issue number1
DOIs
StatePublished - 1979

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