Abstract
For the first time, structure has been found in the electron tunneling characteristics of a metal-oxide-semiconductor tunnel junction of an amorphous semiconductor. In the present study the amorphous semiconductor is phosphorus-doped hydrogenated amorphous silicon. The results have been analyzed to determine the surface density of states over part of the forbidden gap. The basic features of the density-of-states distribution are in agreement with the results of field-effect measurements reported for this material.
| Original language | English |
|---|---|
| Pages (from-to) | 58-61 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 43 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1979 |