Two carrier sensitization as a spectroscopic tool for a-Si:H

L. F. Fonseca*, S. Z. Weisz, R. Rap Aport, I. Balberg

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

In a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

Original languageEnglish
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume557
DOIs
StatePublished - 1999
Externally publishedYes
EventThe 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA
Duration: 5 Apr 19999 Apr 1999

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