TY - JOUR
T1 - Two-dimensional imaging of III-V quantum dots confinement potential
AU - Shusterman, S.
AU - Raizman, A.
AU - Sher, A.
AU - Schwarzman, A.
AU - Azriel, O.
AU - Boag, A.
AU - Rosenwaks, Y.
AU - Galindo, P. L.
AU - Paltiel, Y.
PY - 2009
Y1 - 2009
N2 - Composition, doping, size, and strain distribution within quantum dots, and at the dots-substrate interfaces, determine the confinement potential of electrons and holes creating a complex band structure. We use ultra-high vacuum Kelvin probe force microscopy to obtain the two-dimensional confinement potential in and around InAs and InSb dots epitaxially grown on GaAs. It is found that the potential manifests rich features governed by the strain and composition variations in the vicinity of the individual quantum dots. The results can adjust or confirm theoretical predictions for many epitaxial dots systems.
AB - Composition, doping, size, and strain distribution within quantum dots, and at the dots-substrate interfaces, determine the confinement potential of electrons and holes creating a complex band structure. We use ultra-high vacuum Kelvin probe force microscopy to obtain the two-dimensional confinement potential in and around InAs and InSb dots epitaxially grown on GaAs. It is found that the potential manifests rich features governed by the strain and composition variations in the vicinity of the individual quantum dots. The results can adjust or confirm theoretical predictions for many epitaxial dots systems.
UR - http://www.scopus.com/inward/record.url?scp=77954184724&partnerID=8YFLogxK
U2 - 10.1209/0295-5075/88/66003
DO - 10.1209/0295-5075/88/66003
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AN - SCOPUS:77954184724
SN - 0295-5075
VL - 88
JO - Lettere Al Nuovo Cimento
JF - Lettere Al Nuovo Cimento
IS - 6
M1 - 66003
ER -