Two dimensional photonic band gap pattering in thin chalcogenide glassy films

A. Feigel*, M. Veinger, B. Sfez, A. Arsh, M. Klebanov, V. Lyubin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Photonic band gap (PBG) based elements can significantly contribute to future integrated optical circuits. However, at the wavelength of 1500 nm, they require about 100 nm feature size lithographic processes, which, until now, have been typically accomplished with the help of e-beam lithography. Taking into account that all non-periodic features, e.g. waveguides and cavities, require only ∼300 nm resolution, the process can be separated in two stages. First, interference lithography is used for creation of periodic patterns with minute feature sizes. Second, the non-periodic lower resolution features are added by standard ultraviolet lithography. Using this method 1.3 μm thickness waveguides in 100 nm feature size hexagonal PBG environment were fabricated from high refractive index (n = 2.2-2.5) chalcogenide photoresists.

Original languageAmerican English
Pages (from-to)185-188
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - 22 Sep 2005
Externally publishedYes

Bibliographical note

Funding Information:
The support of Israeli Ministry of Science is gratefully acknowledged.


  • Chalcogenide glassy films
  • Interference laser lithography
  • Photoinduced structural transformations
  • Photonic band gap structures


Dive into the research topics of 'Two dimensional photonic band gap pattering in thin chalcogenide glassy films'. Together they form a unique fingerprint.

Cite this