Abstract
We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.
Original language | English |
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Pages (from-to) | 11754-11757 |
Number of pages | 4 |
Journal | Chemical Communications |
Volume | 60 |
Issue number | 82 |
DOIs | |
State | Published - 25 Sep 2024 |
Bibliographical note
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