Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

Salma Khaldi, Prajith Karadan, Krushnamurty Killi, Clovis Eduardo Mazzotti de Oliveira, Roie Yerushalmi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

Original languageEnglish
Pages (from-to)11754-11757
Number of pages4
JournalChemical Communications
Volume60
Issue number82
DOIs
StatePublished - 25 Sep 2024

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© 2024 The Royal Society of Chemistry.

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