Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

Salma Khaldi; Prajith Karadan; Krushnamurty Killi; Clovis Eduardo Mazzotti de Oliveira; Roie Yerushalmi

doi:10.1039/d4cc04510f

Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al₂O₃ thin films onto SiO₂/Si

Salma Khaldi
, Prajith Karadan
, Krushnamurty Killi
, Clovis Eduardo Mazzotti de Oliveira
, Roie Yerushalmi^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al₂O₃ films deposited on intrinsic silicon with a native SiO₂ layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

Original language	English
Pages (from-to)	11754-11757
Number of pages	4
Journal	Chemical Communications
Volume	60
Issue number	82
DOIs	https://doi.org/10.1039/d4cc04510f
State	Published - 25 Sep 2024

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© 2024 The Royal Society of Chemistry.

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10.1039/d4cc04510f

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abstract = "We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.",

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AU - Khaldi, Salma

AU - Karadan, Prajith

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AU - de Oliveira, Clovis Eduardo Mazzotti

AU - Yerushalmi, Roie

PY - 2024/9/25

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AB - We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

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Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al₂O₃ thin films onto SiO₂/Si

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