Abstract
We describe multiwavelength pump probe characterization of an inhomogeneously broadened semiconductor nanostructure gain medium. An InAs/InP quantum-dash optical amplifier is perturbed by a 100 fs pulse and the response is measured at wavelengths outside the homogeneously broadened spectral region. Energy dependent carrier cross relaxation as well as capture and escape processes are investigated and quantified.
Original language | English |
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Article number | 101108 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 10 |
DOIs | |
State | Published - 7 Mar 2011 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the project “GOSPEL” of the European Commission.