Ultrafast optical response of a high-reflectivity GaAsAlAs Bragg mirror

Sara R. Hastings; Michiel J.A. De Dood; Hyochul Kim; William Marshall; Hagai S. Eisenberg; Dirk Bouwmeester

doi:10.1063/1.1854200

Ultrafast optical response of a high-reflectivity GaAsAlAs Bragg mirror

Sara R. Hastings, Michiel J.A. De Dood, Hyochul Kim, William Marshall, Hagai S. Eisenberg, Dirk Bouwmeester^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The ultrafast response of a high-reflectivity GaAsAlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJm2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond time scale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the band gaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.

Original language	American English
Article number	031109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.1854200
State	Published - 17 Jan 2005
Externally published	Yes

Bibliographical note

Funding Information:
The authors thank W. Irvine and C. Simon for useful discussions. This work was supported by NSF Grant No. PHY-0334970 and DARPA Grant No. MDA972-01-1-0027. S.H. is supported by a NSF Graduate Fellowship.

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title = "Ultrafast optical response of a high-reflectivity GaAsAlAs Bragg mirror",

abstract = "The ultrafast response of a high-reflectivity GaAsAlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJm2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond time scale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the band gaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.",

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note = "Funding Information: The authors thank W. Irvine and C. Simon for useful discussions. This work was supported by NSF Grant No. PHY-0334970 and DARPA Grant No. MDA972-01-1-0027. S.H. is supported by a NSF Graduate Fellowship.",

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AU - Hastings, Sara R.

AU - De Dood, Michiel J.A.

AU - Kim, Hyochul

AU - Marshall, William

AU - Eisenberg, Hagai S.

AU - Bouwmeester, Dirk

N1 - Funding Information: The authors thank W. Irvine and C. Simon for useful discussions. This work was supported by NSF Grant No. PHY-0334970 and DARPA Grant No. MDA972-01-1-0027. S.H. is supported by a NSF Graduate Fellowship.

PY - 2005/1/17

Y1 - 2005/1/17

N2 - The ultrafast response of a high-reflectivity GaAsAlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJm2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond time scale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the band gaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.

AB - The ultrafast response of a high-reflectivity GaAsAlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJm2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond time scale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the band gaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.

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Ultrafast optical response of a high-reflectivity GaAsAlAs Bragg mirror

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