Abstract
We present semianalytical calculations of the valence subband structure for 〈011〉-oriented quantum wells of cubic semiconductors. Working in the Kohn-Luttinger formalism [Phys. Rev. 97, 869 (1955)], we present analytic expressions for the effective mass tensor and show the full subband dispersion for GaAs and InAs. In addition to the usual extremum at k∥=0, 〈011〉-oriented wells support saddle point spectra. In this case, the effective mass changes sign as a function of in-plane crystallographic direction.
Original language | English |
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Pages (from-to) | 288-290 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 78 |
Issue number | 1 |
DOIs | |
State | Published - 1995 |