Valence subband structure of 〈011〉-oriented quantum wells

G. Shechter; L. D. Shvartsman; J. E. Golub

doi:10.1063/1.360672

Valence subband structure of 〈011〉-oriented quantum wells

G. Shechter^*
, L. D. Shvartsman
, J. E. Golub

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We present semianalytical calculations of the valence subband structure for 〈011〉-oriented quantum wells of cubic semiconductors. Working in the Kohn-Luttinger formalism [Phys. Rev. 97, 869 (1955)], we present analytic expressions for the effective mass tensor and show the full subband dispersion for GaAs and InAs. In addition to the usual extremum at k_∥=0, 〈011〉-oriented wells support saddle point spectra. In this case, the effective mass changes sign as a function of in-plane crystallographic direction.

Original language	English
Pages (from-to)	288-290
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	1
DOIs	https://doi.org/10.1063/1.360672
State	Published - 1995

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AB - We present semianalytical calculations of the valence subband structure for 〈011〉-oriented quantum wells of cubic semiconductors. Working in the Kohn-Luttinger formalism [Phys. Rev. 97, 869 (1955)], we present analytic expressions for the effective mass tensor and show the full subband dispersion for GaAs and InAs. In addition to the usual extremum at k∥=0, 〈011〉-oriented wells support saddle point spectra. In this case, the effective mass changes sign as a function of in-plane crystallographic direction.

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Valence subband structure of 〈011〉-oriented quantum wells

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