Vertical unseeded vapor growth and characterization of Cd0.95Zn0.05Te crystals

L. Ben-Dor; N. Yellin

doi:10.1016/0022-0248(85)90358-6

Vertical unseeded vapor growth and characterization of Cd_0.95Zn_0.05Te crystals

L. Ben-Dor^*, N. Yellin

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Single crystals of Cd_0.95Zn_0.05Te were grown by the vertical unseeded vapor growth. Large (1-2 cm³, homogeneous crystals with high purity and perfection were obtained. The system shows similarity to CdTe in its dependence of growth rate on time and on nonstoichiometry of the growth charges. The crystal resistivity was found to be strongly dependent on charge composition, being different from that observed for CdTe. Maximum resistivity of ∼ 10⁷ Ω cm and a value of ∼ 10² Ω cm for Te-saturated Cd_0.95Zn_0.05Te were obtained.

Original language	English
Pages (from-to)	519-524
Number of pages	6
Journal	Journal of Crystal Growth
Volume	71
Issue number	3
DOIs	https://doi.org/10.1016/0022-0248(85)90358-6
State	Published - 1985

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title = "Vertical unseeded vapor growth and characterization of Cd0.95Zn0.05Te crystals",

abstract = "Single crystals of Cd0.95Zn0.05Te were grown by the vertical unseeded vapor growth. Large (1-2 cm3, homogeneous crystals with high purity and perfection were obtained. The system shows similarity to CdTe in its dependence of growth rate on time and on nonstoichiometry of the growth charges. The crystal resistivity was found to be strongly dependent on charge composition, being different from that observed for CdTe. Maximum resistivity of ∼ 107 Ω cm and a value of ∼ 102 Ω cm for Te-saturated Cd0.95Zn0.05Te were obtained.",

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AU - Ben-Dor, L.

AU - Yellin, N.

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AB - Single crystals of Cd0.95Zn0.05Te were grown by the vertical unseeded vapor growth. Large (1-2 cm3, homogeneous crystals with high purity and perfection were obtained. The system shows similarity to CdTe in its dependence of growth rate on time and on nonstoichiometry of the growth charges. The crystal resistivity was found to be strongly dependent on charge composition, being different from that observed for CdTe. Maximum resistivity of ∼ 107 Ω cm and a value of ∼ 102 Ω cm for Te-saturated Cd0.95Zn0.05Te were obtained.

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Vertical unseeded vapor growth and characterization of Cd_0.95Zn_0.05Te crystals

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