Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors

Maurizio Casalino, Ugo Sassi, Ilya Goykhman, Anna Eiden, Elefterios Lidorikis, Silvia Milana, Domenico De Fazio, Flavia Tomarchio, Mario Iodice, Giuseppe Coppola, Andrea C. Ferrari*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

115 Scopus citations

Abstract

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

Original languageEnglish
Pages (from-to)10955-10963
Number of pages9
JournalACS Nano
Volume11
Issue number11
DOIs
StatePublished - 28 Nov 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

  • graphene
  • internal photoemission
  • photodetectors
  • resonant cavity

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