Visible photoluminescence of Ge enriched SiOx layers

T. V. Torchynska; A. Vivas Hernandez; A. V. Kolobov; Y. Goldstein; E. Savir; J. Jedrzejewski

doi:10.1016/j.elspec.2004.02.039

Visible photoluminescence of Ge enriched SiO_x layers

T. V. Torchynska^*, A. Vivas Hernandez, A. V. Kolobov, Y. Goldstein, E. Savir, J. Jedrzejewski

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This paper concentrates on results of photoluminescence (PL), Raman scattering and extended X-ray absorption fine structure (EXAFS) investigations of silicon oxide films enriched by Ge. All the spectra were analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-quantum dots, QD) and for films after high temperature annealing in inert atmosphere with the aim of creating Ge-nano-crystallites (nc)-quantum dots. Five PL bands were discovered in Ge-SiO_x systems. It is shown that the visible PL bands peaked at 1.61-1.65eV (2), 1.75-1.80eV (3), 2.00-2.06eV (4) and 2.25-2.30eV (5) do not correlate with the presence of Ge atoms or Ge-nc in the samples. The nature of the infrared PL band peaked at 1.43-1.52eV is not clear. The intensity of this PL band increases in thermally annealed samples with increasing Ge concentration.

Original language	English
Pages (from-to)	619-622
Number of pages	4
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	137-140
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.elspec.2004.02.039
State	Published - Jul 2004

Keywords

Ge-SiO layers
Ge-quantum dots
Visible photoluminescence

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10.1016/j.elspec.2004.02.039

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@article{41feaf8942e1420bbfe0e6a1f384aa37,

title = "Visible photoluminescence of Ge enriched SiOx layers",

abstract = "This paper concentrates on results of photoluminescence (PL), Raman scattering and extended X-ray absorption fine structure (EXAFS) investigations of silicon oxide films enriched by Ge. All the spectra were analyzed both for {"}as prepared{"} silicon oxide films enriched by Ge (without Ge-quantum dots, QD) and for films after high temperature annealing in inert atmosphere with the aim of creating Ge-nano-crystallites (nc)-quantum dots. Five PL bands were discovered in Ge-SiOx systems. It is shown that the visible PL bands peaked at 1.61-1.65eV (2), 1.75-1.80eV (3), 2.00-2.06eV (4) and 2.25-2.30eV (5) do not correlate with the presence of Ge atoms or Ge-nc in the samples. The nature of the infrared PL band peaked at 1.43-1.52eV is not clear. The intensity of this PL band increases in thermally annealed samples with increasing Ge concentration.",

keywords = "Ge-SiO layers, Ge-quantum dots, Visible photoluminescence",

author = "Torchynska, {T. V.} and Hernandez, {A. Vivas} and Kolobov, {A. V.} and Y. Goldstein and E. Savir and J. Jedrzejewski",

year = "2004",

month = jul,

doi = "10.1016/j.elspec.2004.02.039",

language = "אנגלית",

volume = "137-140",

pages = "619--622",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier B.V.",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Visible photoluminescence of Ge enriched SiOx layers

AU - Torchynska, T. V.

AU - Hernandez, A. Vivas

AU - Kolobov, A. V.

AU - Goldstein, Y.

AU - Savir, E.

AU - Jedrzejewski, J.

PY - 2004/7

Y1 - 2004/7

N2 - This paper concentrates on results of photoluminescence (PL), Raman scattering and extended X-ray absorption fine structure (EXAFS) investigations of silicon oxide films enriched by Ge. All the spectra were analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-quantum dots, QD) and for films after high temperature annealing in inert atmosphere with the aim of creating Ge-nano-crystallites (nc)-quantum dots. Five PL bands were discovered in Ge-SiOx systems. It is shown that the visible PL bands peaked at 1.61-1.65eV (2), 1.75-1.80eV (3), 2.00-2.06eV (4) and 2.25-2.30eV (5) do not correlate with the presence of Ge atoms or Ge-nc in the samples. The nature of the infrared PL band peaked at 1.43-1.52eV is not clear. The intensity of this PL band increases in thermally annealed samples with increasing Ge concentration.

AB - This paper concentrates on results of photoluminescence (PL), Raman scattering and extended X-ray absorption fine structure (EXAFS) investigations of silicon oxide films enriched by Ge. All the spectra were analyzed both for "as prepared" silicon oxide films enriched by Ge (without Ge-quantum dots, QD) and for films after high temperature annealing in inert atmosphere with the aim of creating Ge-nano-crystallites (nc)-quantum dots. Five PL bands were discovered in Ge-SiOx systems. It is shown that the visible PL bands peaked at 1.61-1.65eV (2), 1.75-1.80eV (3), 2.00-2.06eV (4) and 2.25-2.30eV (5) do not correlate with the presence of Ge atoms or Ge-nc in the samples. The nature of the infrared PL band peaked at 1.43-1.52eV is not clear. The intensity of this PL band increases in thermally annealed samples with increasing Ge concentration.

KW - Ge-SiO layers

KW - Ge-quantum dots

KW - Visible photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=2942597731&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2004.02.039

DO - 10.1016/j.elspec.2004.02.039

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:2942597731

SN - 0368-2048

VL - 137-140

SP - 619

EP - 622

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - SPEC. ISS.

ER -

Visible photoluminescence of Ge enriched SiO_x layers

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Keywords

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